Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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IXYS IXGT24N170

IGBT 1700V 50A 250W TO268

0.2

IXYS IXYH8N250C

IGBT 2500V 29A TO247AD

0.2

IXYS IXGX120N60B3

IGBT 600V 280A 780W PLUS247

0.2

IXYS IXGH40N120B2D1

IGBT 1200V 75A 380W TO247

0.2

IXYS IXYH100N65A3

IGBT

0.2

Microsemi Corporation APT70GR120B2

IGBT 1200V 160A 961W TO247

0.2

Infineon Technologies IRG7PH50UPBF

IGBT 1200V 140A 556W TO247AC

12.42

Microsemi Corporation APT70GR120L

IGBT 1200V 160A 961W TO264

0.2