Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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IXYS IXYK140N90C3

IGBT 900V 310A 1630W TO264

0.2

IXYS IXGH24N170

IGBT 1700V 50A 250W TO247AD

0.2

Infineon Technologies IGC70T120T8RQ

IGBT 1200V 75A DIE

0.2

IXYS IXYX140N90C3

IGBT 900V 310A 1630W TO247

0.2

IXYS IXGT24N170A

IGBT 1700V 24A 250W TO268

0.2

IXYS IXYX200N65B3

IGBT

0.2

IXYS IXGK35N120B

IGBT 1200V 70A 350W TO264AA

0.2

IXYS IXXX140N65B4H1

IGBT

0.2