Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Infineon Technologies IGB10N60TATMA1

IGBT 600V 20A 110W TO263-3

0

Infineon Technologies IKD06N60RFATMA1

IGBT 600V 12A 100W PG-TO252-3

0

Infineon Technologies IKD06N60RATMA1

IGBT 600V 12A TO252-3

0

Infineon Technologies IKD03N60RFATMA1

IGBT 600V 6.5A TO252-3

0

ON Semiconductor NGTB05N60R2DT4G

IGBT 5A 600V DPAK

0

Infineon Technologies IKD03N60RF

IGBT 600V 5A 53.6W TO252-3

0

IXYS IXBA14N300HV

REVERSE CONDUCTING IGBT

40.19

STMicroelectronics STGY80H65DFB

IGBT 650V 120A 469W MAX247

14.31