Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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STMicroelectronics STGWA60NC60WDR

IGBT 600V 130A 340W TO247

8.37

STMicroelectronics STGW40NC60V

IGBT 600V 80A 260W TO247

8.27

Infineon Technologies AUIRGP66524D0

IGBT 600V 60A 214W TO-247AC

7.97

STMicroelectronics STGWA80H65DFB

IGBT BIPO 650V 80A TO247-3

7.5

STMicroelectronics STGFW35HF60W

IGBT 600V 36A 88W TO3PF

7.25

STMicroelectronics STGW50NC60W

IGBT 600V 100A 285W TO247

7.22

STMicroelectronics STGFW80V60F

IGBT 600V 120A 79W TO-3PF

7.01

STMicroelectronics STGFW30NC60V

IGBT 600V 36A 80W TO3PF

6.77