Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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STMicroelectronics STGW50HF60SD

IGBT 600V 110A 284W TO247

6.75

STMicroelectronics STGW40NC60W

IGBT 600V 70A 250W TO247

6.43

STMicroelectronics STGP100N30

IGBT 330V 90A 250W TO220

6.4

Infineon Technologies AUIRG4PC40S-E

IGBT 600V 60A 160W TO247

6.41

STMicroelectronics STGW60H65F

IGBT 650V 120A 360W TO247

6.37

STMicroelectronics STGW50HF60S

IGBT 600V 110A 284W TO247

6.3

STMicroelectronics STGWA45HF60WDI

IGBT 600V 80A 310W TO247

6.14

ON Semiconductor NGTB50N120FL2WAG

IGBT FIELD STOP 1.2KV TO247-4

6.09