Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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ON Semiconductor ISL9V5045S3ST-F085

IGBT 480V 51A 300W D2PAK

0

STMicroelectronics STGW30H60DLFB

IGBT HB 600V 30A HS TO247

3.39

STMicroelectronics STGFW20V60DF

IGBT 600V 40A 52W TO-3PF

3.34

Alpha & Omega Semiconductor Inc. AOK20B65M2

IGBT 650V 20A TO247

3.33

STMicroelectronics STGWT20V60DF

IGBT 600V 40A 167W TO3P-3

3.31

STMicroelectronics STGWT30V60F

IGBT 600V 60A 260W TO3PF

3.28

Alpha & Omega Semiconductor Inc. AOKS40B60D1

IGBT 600V 40A TO247

3.31

STMicroelectronics STGP30H65F

IGBT 650V 60A 260W TO-220AB

3.09