Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

---

STMicroelectronics STGW45HF60WD

IGBT 600V 70A 250W TO247

2.63

ON Semiconductor HGT1S10N120BNST

IGBT 1200V 35A 298W TO263AB

0

STMicroelectronics STGD10NC60ST4

IGBT 600V 18A 60W DPAK

2.51

STMicroelectronics STGB10H60DF

IGBT 600V 20A 115W D2PAK

0

STMicroelectronics STGB19NC60WT4

IGBT 600V 40A 130W D2PAK

0

STMicroelectronics STGB19NC60HDT4

IGBT 600V 40A 130W D2PAK

0

STMicroelectronics STGW19NC60H

IGBT 600V 42A 140W TO-247

2.39

STMicroelectronics STGB15M65DF2

TRENCH GATE FIELD-STOP IGBT M SE

0