Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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ON Semiconductor HGTD7N60C3S9A

IGBT 600V 14A 60W TO252AA

0

STMicroelectronics STGB5H60DF

TRENCH GATE FIELD-STOP IGBT, H S

0

STMicroelectronics STGD6NC60H-1

IGBT N-CH 600V 7A IPAK

1.42

STMicroelectronics STGD6NC60HDT4

IGBT 600V 15A 56W DPAK

1.37

STMicroelectronics STGD8NC60KDT4

IGBT 600V 15A 62W DPAK

0

STMicroelectronics STGD6M65DF2

TRENCH GATE FIELD-STOP IGBT, M S

0

STMicroelectronics STGB10NC60KT4

IGBT 600V 20A 65W D2PAK

0

STMicroelectronics STGB10NB40LZT4

IGBT 440V 20A 150W D2PAK

0