Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

---

Infineon Technologies IKQ50N120CT2XKSA1

IGBT 1200V 100A TO247-3-46

12.26

Infineon Technologies IKQ50N120CH3XKSA1

IGBT HS SW 1200V 50A TO-247-3

12.26

Infineon Technologies AIKQ100N60CTXKSA1

IC DISCRETE 600V TO247-3

12.13

ON Semiconductor FGH50N6S2D

IGBT 600V 75A 463W TO247

11.85

ON Semiconductor FGY120T65SPD-F085

IGBT 650V 240A 882W TO-247

11.49

ON Semiconductor AFGHL50T65SQDC

IGBT 650V A

11.25

Infineon Technologies IKQ40N120CT2XKSA1

IGBT HS SW 1200V 40A TO-247-3

11.09

Infineon Technologies IKY40N120CH3XKSA1

IGBT 1200V 80A TO247-4

10.45