Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Infineon Technologies IKW15N120BH6XKSA1

IGBT 1200 V 15A TO247-3-46

5.55

ON Semiconductor FGH40N60SMD-F085

IGBT 600V 80A 349W TO-247-3

5.49

ROHM Semiconductor RGW00TK65GVC11

650V 50A FIELD STOP TRENCH IGBT

5.41

ROHM Semiconductor RGTV00TK65GVC11

650V 50A FIELD STOP TRENCH IGBT

5.4

ROHM Semiconductor RGTH00TK65GC11

IGBT

5.36

ON Semiconductor FGA30N60LSDTU

IGBT 600V 60A 480W TO3PN

5.32

ON Semiconductor FGH60N60SFDTU

IGBT 600V 120A 378W TO247

5.28

STMicroelectronics STGW40H65DFB-4

IGBT

5.01