Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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ON Semiconductor FGA50N100BNTDTU

IGBT 1000V 50A 156W TO3P

4.63

ON Semiconductor FGH15T120SMD-F155

IGBT 1200V 30A 333W TO247-3

4.56

ON Semiconductor FGH40N60SFTU

IGBT 600V 80A 290W TO247

4.55

ON Semiconductor NGTB25N120FL2WG

IGBT 1200V 25A TO247-3

4.51

Infineon Technologies AIKW20N60CTXKSA1

IC DISCRETE 600V TO247-3

4.51

ON Semiconductor FGH60T65SQD-F155

650V 60A FS4 TRENCH IGBT

4.43

ON Semiconductor NGTB40N120FL2WAG

IGBT FIELD STOP 1200V TO247-4

4.45

STMicroelectronics STGW30NC60VD

IGBT 600V 80A 250W TO247

4.31