Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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STMicroelectronics STGWA50IH65DF

TRENCH GATE FIELD-STOP IGBT 650

4.15

STMicroelectronics STGWA40HP65FB2

TRENCH GATE FIELD-STOP, 650 V, 4

4.15

ON Semiconductor FGH40T65UQDF-F155

FS4TIGBT TO247 40A 650V

4.14

ON Semiconductor NGTB30N135IHRWG

IGBT 1350V 60A 394W TO247

4.06

Infineon Technologies IKP39N65ES5XKSA1

IGBT 650V 39A TO220-3

4.04

ON Semiconductor FGH50T65SQD-F155

650V FS4 TRENCH IGBT

4.06

STMicroelectronics STGW40H60DLFB

IGBT 600V 80A 283W TO-247

4.03

ON Semiconductor AFGHL40T65SPD

FS3 T TO247 40A 650V AUTO

3.93