Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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IXYS IXYH24N170CV1

IGBT 1.7KV 58A TO247

12.41

IXYS IXBH2N250

IGBT 2500V 5A 32W TO247

11.69

Microsemi Corporation APT30GP60BDQ1G

IGBT 600V 100A 463W TO247

11.67

Infineon Technologies IRGP4066DPBF

IGBT 600V 140A 454W TO247AC

11.28

IXYS IXYH10N170CV1

IGBT 1.7KV 36A TO247

10.92

Infineon Technologies AIKW75N60CTXKSA1

IC DISCRETE 600V TO247-3

10.25

Infineon Technologies IRG4PC50UDPBF

IGBT 600V 55A 200W TO247AC

9.34

Infineon Technologies IKW40N120CS6XKSA1

IGBT 1200V 40A TO247-3-46

8.92