Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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IXYS IXYX30N170CV1

1700V/108A HIGH VOLTAGE XPT IGB

18.48

IXYS IXXX200N65B4

IGBT 650V 370A 1150W PLUS247

17.71

Infineon Technologies IRG4PSC71UDPBF

IGBT 600V 85A 350W SUPER247

14.3

IXYS IXYH82N120C3

IGBT 1200V 200A 1250W TO247AD

14.11

Infineon Technologies IKQ120N60TXKSA1

IGBT 600V 160A TO247-3-46

12.65

IXYS IXBH16N170A

IGBT 1700V 16A 150W TO247AD

12.48

Infineon Technologies AUIRGP4063D

IGBT 600V 96A 330W TO-247AC

12.36

IXYS IXBH16N170

IGBT 1700V 40A 250W TO247AD

12.11