Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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STMicroelectronics STGF7NB60SL

IGBT 600V 15A 25W TO220FP

1.6

ON Semiconductor NGTG15N60S1EG

IGBT 600V 30A 117W TO220-3

1.36

STMicroelectronics STGF5H60DF

TRENCH GATE FIELD-STOP IGBT, H S

1.25

STMicroelectronics STGP10NC60KD

IGBT 600V 20A 65W TO220

1.21

STMicroelectronics STGP10NC60HD

IGBT 600V 20A 65W TO220

1.21

STMicroelectronics STGD5NB120SZT4

IGBT 1200V 10A 75W DPAK

0

ON Semiconductor ISL9V3040D3ST

IGBT 430V 21A 150W TO252AA

0

STMicroelectronics STGB10NC60KDT4

IGBT 600V 20A 65W D2PAK

0