Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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IXYS IXBX55N300

IGBT 3000V 130A 625W PLUS247

69.05

IXYS IXBX50N360HV

IGBT 3600V 125A 660W TO-247PLUS

56.01

IXYS IXGF30N400

IGBT 4000V 30A 160W I4-PAK

53

IXYS IXBH32N300

IGBT 3000V 80A 400W TO247

40.79

IXYS IXLF19N250A

IGBT 2500V 32A 250W I4PAC

40.1

IXYS IXYN30N170CV1

1700V/85A HIGH VOLTAGE XPT IGBT

31.9

Microsemi Corporation APT75GP120B2G

IGBT 1200V 100A 1042W TMAX

26.46

IXYS IXYX120N120C3

IGBT 1200V 240A 1500W PLUS247

25.43