Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Infineon Technologies IRG8P60N120KD-EPBF

IGBT 1200V 100A 420W TO-247AD

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Infineon Technologies IRG8P50N120KD-EPBF

IGBT 1200V 80A 305W TO-247AD

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Infineon Technologies IRG8P40N120KD-EPBF

IGBT 1200V 60A 305W TO-247AD

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Infineon Technologies IRG8P25N120KD-EPBF

IGBT 1200V 40A 180W TO-247AD

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Infineon Technologies IRG8P50N120KDPBF

IGBT 1200V 80A 305W TO-247AC

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Infineon Technologies IRG8P40N120KDPBF

IGBT 1200V 60A 305W TO-247AC

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Infineon Technologies IRG8P25N120KDPBF

IGBT 1200V 40A 180W TO-247AC

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Infineon Technologies IRG8P15N120KDPBF

IGBT 1200V 30A 125W TO-247AC

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