Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Infineon Technologies IRG7PG42UD-EPBF

IGBT 1000V 85A 320W TO247AD

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Infineon Technologies IRG7PG35UPBF

IGBT 1000V 55A 210W TO247AC

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Infineon Technologies IRG7PG35U-EPBF

IGBT 1000V 55A 210W TO247AD

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Infineon Technologies AUIRGP65G40D0

IGBT 600V 62A 625W TO247

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Infineon Technologies AUIRGF65G40D0

IGBT 600V 62A 625W TO247

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ON Semiconductor NGTB60N60SWG

IGBT 600V 120A 298W TO247

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ON Semiconductor NGTB40N60FL2WG

IGBT 600V 80A 366W TO247

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ON Semiconductor NGTB30N60SWG

IGBT 600V 60A 189W TO247

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