Bipolar RF Transistors

Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.

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Diodes Incorporated BFS17NQTA

RF TRANS NPN 11V 3.2GHZ SOT23

0.22

Infineon Technologies BFR843EL3E6327XTSA1

RF TRANS NPN 2.6V TSLP-3-10

0

Infineon Technologies BFP640FESDH6327XTSA1

RF TRANS NPN 4.7V 46GHZ 4TSFP

0.2

ON Semiconductor CPH6020-TL-E

RF TRANS NPN 8V 16GHZ 6CPH

0.2

ON Semiconductor CPH6021-TL-H

RF TRANS NPN 12V 10GHZ 6CPH

0.19

Infineon Technologies BFP720FH6327XTSA1

RF TRANS NPN 4.7V 45GHZ 4TSFP

0.18

Infineon Technologies BFP843FH6327XTSA1

RF TRANS NPN 2.25V TSFP-4-1

0

Infineon Technologies BFP405H6740XTSA1

RF TRANS NPN 5V 25GHZ SOT343

0.17