Bipolar RF Transistors

Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.

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Panasonic Electronic Components DSC9G0200L

RF TRANS NPN 20V 650MHZ SSMINI3

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Infineon Technologies BFS17SH6327XTSA1

RF TRANS 2NPN 15V 1.4GHZ SOT363

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Infineon Technologies BFP420H6433XTMA1

RF TRANS NPN 5V 25GHZ SOT343

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Infineon Technologies BFP182RE7764HTSA1

RF TRANS NPN 12V 8GHZ SOT143R-4

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ON Semiconductor 15GN03FA-TL-H

TRANS NPN VHF-UHF 70A 10V SSFP

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Infineon Technologies BFR35APE6327HTSA1

RF TRANS NPN 15V 5GHZ SOT23-3

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ROHM Semiconductor 2SC4618TLN

RF TRANS NPN 25V 300MHZ EMT3

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ON Semiconductor 55GN01FA-TL-H

RF TRANS NPN 10V 5.5GHZ 3SSFP

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