Bipolar RF Transistors

Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.

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Infineon Technologies BFP740H6327XTSA1

RF TRANS NPN 4.7V 42GHZ SOT343

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Infineon Technologies BFP840ESDH6327XTSA1

RF TRANS NPN 2.25V 80GHZ SOT343

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Infineon Technologies BFP520H6327XTSA1

RF TRANS NPN 3.5V 45GHZ SOT343-4

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Infineon Technologies BFR193L3E6327XTMA1

RF TRANS NPN 12V 8GHZ TSLP-3-1

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Infineon Technologies BFP181E7764HTSA1

RF TRANS NPN 12V 8GHZ SOT143-4

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Infineon Technologies BFR460L3E6327XTMA1

RF TRANS NPN 5.8V 22GHZ TSLP-3-1

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Infineon Technologies BFP193WH6327XTSA1

RF TRANS NPN 12V 8GHZ SOT343-4

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Infineon Technologies BFP 182 E7764

RF TRANS NPN 12V 8GHZ SOT143-4

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