Bipolar RF Transistors

Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.

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Renesas Electronics America Inc. HFA3134IHZ96

RF TRANS 2 NPN 9V 8.5GHZ SOT23-6

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Renesas Electronics America Inc. HFA3102BZ96

RF TRANS 6 NPN 12V 10GHZ 14SOIC

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Renesas Electronics America Inc. HFA3102BZ

RF TRANS 6 NPN 12V 10GHZ 14SOIC

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NXP USA Inc. BFG35,115

RF TRANS NPN 18V 4GHZ SOT223

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Toshiba Semiconductor and Storage MT3S113P(TE12L,F)

RF TRANS NPN 5.3V 7.7GHZ PW-MINI

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NXP USA Inc. BFU580QX

RF TRANS NPN 12V 10.5GHZ SOT89-3

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CEL NE68039R-T1-A

RF TRANS NPN 10V 10GHZ SOT143R

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NXP USA Inc. BFU790F,115

RF TRANS NPN 2.8V 25GHZ 4DFP

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