Bipolar RF Transistors

Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.


NXP USA Inc. BFU530XRR

RF TRANS NPN 12V 11GHZ SOT143R

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NXP USA Inc. BFU530XAR

RF TRANS NPN 12V 11GHZ SOT143B

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ON Semiconductor 2SC5646A-TL-H

RF TRANS NPN 4V 12.5GHZ 3SSFP

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ON Semiconductor 2SC5227A-5-TB-E

RF TRANS NPN 10V 7GHZ 3CP

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ON Semiconductor 2SC5227A-4-TB-E

RF TRANS NPN 10V 7GHZ 3CP

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ROHM Semiconductor 2SC4618TLP

RF TRANS NPN 25V 300MHZ EMT3

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NXP USA Inc. ON5088,115

RF TRANS NPN 10V 55GHZ 4DFP

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Toshiba Semiconductor and Storage 2SC4915-O,LF

RF TRANS NPN 30V 550MHZ SSM

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