Bipolar RF Transistors
Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.
NXP USA Inc. BFU610F,115
RF TRANS NPN 5.5V 15GHZ 4DFP
0
ON Semiconductor 55GN01CA-TB-E
RF TRANS NPN 10V 4.5GHZ 3CP
0
ON Semiconductor 2SC5265LS-1HX
TRANSISTOR RF
0
Central Semiconductor Corp 2N3501
TRANS NPN 150V 0.3A TO-39
7.83
Microsemi Corporation 2N3500
TRANS NPN 150V 0.3A TO-39
10.37
Toshiba Semiconductor and Storage 2SC5085-Y(TE85L,F)
RF TRANS NPN 12V 7GHZ USM
0
NXP USA Inc. BFU530R
RF TRANS NPN 12V 11GHZ SOT143B
0
ROHM Semiconductor 2SC4713KT146S
RF TRANS NPN 6V 800MHZ SMT3
0