Bipolar RF Transistors
Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.
Microsemi Corporation MRFC544
RF POWER TRANSISTOR
0
Microsemi Corporation MRF5812M
TRANS NPN 15V 200MA
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Microsemi Corporation MPA201HS
TRANS RF BIPO 6W 300MA 55AU2
0
Microsemi Corporation MC1331-3
RF POWER TRANSISTOR
0
Microsemi Corporation MC1331-2
RF POWER TRANSISTOR
0
Microsemi Corporation MC1331
RF POWER TRANSISTOR
0
Microsemi Corporation 90025HS
RF POWER TRANSISTOR
0
Microsemi Corporation 80279H
RF POWER TRANSISTOR
0