Bipolar RF Transistors
Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.
Microsemi Corporation MS2092H
RF POWER TRANSISTOR
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Microsemi Corporation MS2091H
RF POWER TRANSISTOR
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Microsemi Corporation MS1801
RF POWER TRANSISTOR
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Microsemi Corporation MS1701
RF POWER TRANSISTOR
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Microsemi Corporation MS1612
RF POWER TRANSISTOR
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Microsemi Corporation MS1087T
RF POWER TRANSISTOR
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Microsemi Corporation MS1076C
RF POWER TRANSISTOR
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Microsemi Corporation MS1076A
RF POWER TRANSISTOR
0