IGBT Modules

Insulated-gate bipolar transistors (IGBTs) are three-terminal power semiconductor devices primarily used as electronic switches that combine high efficiency and fast switching. As modules, IGBTs are configured as asymmetrical bridges, boost, buck and brake choppers, full-bridge, three-level and three-phase inverters. Some have built-in NTC thermistors for temperature monitoring. IGBT modules are differentiated by max power, collector current, collector-emitter breakdown voltage and configuration.

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Infineon Technologies FS150R12KT3BOSA1

IGBT MODULE 1200V 200A CHASS MNT

181.02

Infineon Technologies F3L300R12MT4PB23BPSA1

MEDIUM POWER ECONO

180.74

Infineon Technologies F3L300R12MT4PB22BPSA1

MEDIUM POWER ECONO

180.74

Microsemi Corporation APTGLQ300H65G

PWR MOD IGBT4 650V 600A SP6

194.82

Microsemi Corporation APTGT300H60G

IGBT MOD TRENCH FULL BRIDGE SP6

194.8

Infineon Technologies BSM150GB170DLCHOSA1

IGBT 2 MED POWER 62MM-1

194.16

Microsemi Corporation APTGL475A120D3G

POWER MOD IGBT4 PHASE LEG D3

212.33

Microsemi Corporation APTGT400DU120G

IGBT TRENCH DUAL SRC 1200V SP6

211.43