IGBT Modules

Insulated-gate bipolar transistors (IGBTs) are three-terminal power semiconductor devices primarily used as electronic switches that combine high efficiency and fast switching. As modules, IGBTs are configured as asymmetrical bridges, boost, buck and brake choppers, full-bridge, three-level and three-phase inverters. Some have built-in NTC thermistors for temperature monitoring. IGBT modules are differentiated by max power, collector current, collector-emitter breakdown voltage and configuration.

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Infineon Technologies DDB6U180N16RRPB37BPSA1

BRIDGE RECT 3P 1.6KV 50A ECONO2

113.31

Infineon Technologies DDB6U104N16RRBOSA1

DIODE MODULE GP 1600V 25A

67.09

Infineon Technologies DD1200S33K2CNOSA1

DIODE MOD 3300VA-IHV130-3-1

0

Infineon Technologies DDB6U104N18RRBOSA1

DIODE MODULE GP 1800V

0

Infineon Technologies TDB6HK180N16RRB48BPSA1

SCR MODULE VDRM 1600V 70A

127.32

Infineon Technologies TDB6HK180N16RRBOSA1

SCR MODULE VDRM 1600V 70A

112.67

IXYS IXYN100N65C3H1

IGBT XPT 650V 166A SOT-227B

24.32

Microsemi Corporation APTGT600A60G

POWER MODULE IGBT 600V 600A SP6

208.73