IGBT Modules

Insulated-gate bipolar transistors (IGBTs) are three-terminal power semiconductor devices primarily used as electronic switches that combine high efficiency and fast switching. As modules, IGBTs are configured as asymmetrical bridges, boost, buck and brake choppers, full-bridge, three-level and three-phase inverters. Some have built-in NTC thermistors for temperature monitoring. IGBT modules are differentiated by max power, collector current, collector-emitter breakdown voltage and configuration.

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Infineon Technologies DDB6U180N16RRPB37BPSA1

BRIDGE RECT 3P 1.6KV 50A ECONO2

0.2

Infineon Technologies DDB6U104N16RRBOSA1

DIODE MODULE GP 1600V 25A

0.2

Infineon Technologies DD1200S33K2CNOSA1

DIODE MOD 3300VA-IHV130-3-1

0.2

Infineon Technologies DDB6U104N18RRBOSA1

DIODE MODULE GP 1800V

0.2

Infineon Technologies TDB6HK180N16RRB48BPSA1

SCR MODULE VDRM 1600V 70A

0.2

Infineon Technologies TDB6HK180N16RRBOSA1

SCR MODULE VDRM 1600V 70A

0.2

IXYS IXYN100N65C3H1

IGBT XPT 650V 166A SOT-227B

24.32

Microsemi Corporation APTGT600A60G

POWER MODULE IGBT 600V 600A SP6

208.73