IGBT Modules

Insulated-gate bipolar transistors (IGBTs) are three-terminal power semiconductor devices primarily used as electronic switches that combine high efficiency and fast switching. As modules, IGBTs are configured as asymmetrical bridges, boost, buck and brake choppers, full-bridge, three-level and three-phase inverters. Some have built-in NTC thermistors for temperature monitoring. IGBT modules are differentiated by max power, collector current, collector-emitter breakdown voltage and configuration.

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Microsemi Corporation APTGT50H120T3G

IGBT MOD TRENCH FULL BRIDGE SP3

65.39

Infineon Technologies DF75R12W1H4FB11BOMA2

MOD DIODE BRIDGE EASY1B-2-1

65.23

Infineon Technologies F3L150R07W2E3B11BOMA1

IGBT MODULE VCES 600V 150A

65.23

Infineon Technologies FS3L30R07W2H3FB11BPSA2

MOD DIODE BRIDGE EASY2B-2-1

65.23

Infineon Technologies DF80R12W2H3FB11BPSA1

MOD DIODE BRIDGE EASY1B-2-1

65.23

Microsemi Corporation APTGL60TL120T3G

POWER MODULE IGBT 1200V 60A SP3

64.99

IXYS MKI75-06A7T

IGBT H-BRIDGE 600V E2PACK

64.75

IXYS MWI50-06A7T

MOD IGBT SIXPACK RBSOA 600V E2

64.38