IGBT Modules

Insulated-gate bipolar transistors (IGBTs) are three-terminal power semiconductor devices primarily used as electronic switches that combine high efficiency and fast switching. As modules, IGBTs are configured as asymmetrical bridges, boost, buck and brake choppers, full-bridge, three-level and three-phase inverters. Some have built-in NTC thermistors for temperature monitoring. IGBT modules are differentiated by max power, collector current, collector-emitter breakdown voltage and configuration.

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Infineon Technologies FS50R06W1E3B11BOMA1

MOD IGBT LOW PWR EASY1B-2

33.45

IXYS MIXA20W1200MC

IGBT MODULE 1200V 20A HEX

33.42

Vishay / Semiconductor - Diodes Division CPV362M4U

IGBT SIP MODULE 600V 3.9A IMS-2

33.35

Vishay / Semiconductor - Diodes Division CPV362M4K

IGBT SIP MODULE 600V 31 IMS-2

33.35

Vishay / Semiconductor - Diodes Division CPV362M4F

IGBT SIP MODULE 600V 8.8A IMS-2

33.35

Infineon Technologies FS25R12W1T4B11BOMA1

MOD IGBT LOW PWR EASY1B-2

33.19

Infineon Technologies FP10R12W1T4B11BOMA1

IGBT MODULE VCES 600V 100A

32.92

Infineon Technologies FP10R12W1T4BOMA1

IGBT MODULE VCES 600V 100A

32.34