IGBT Modules

Insulated-gate bipolar transistors (IGBTs) are three-terminal power semiconductor devices primarily used as electronic switches that combine high efficiency and fast switching. As modules, IGBTs are configured as asymmetrical bridges, boost, buck and brake choppers, full-bridge, three-level and three-phase inverters. Some have built-in NTC thermistors for temperature monitoring. IGBT modules are differentiated by max power, collector current, collector-emitter breakdown voltage and configuration.


Infineon Technologies FS100R17N3E4BOSA1

IGBT MODULE 1700V 100A

163

Infineon Technologies FZ800R12KE3HOSA1

IGBT MODULE 1200V 800A

155.13

Microsemi Corporation APT100GT120JRDQ4

IGBT 1200V 123A 570W SOT227

50.81

Infineon Technologies FS35R12W1T4BOMA1

IGBT MODULE 1200V 35A

38.32

Microsemi Corporation APT75GT120JRDQ3

IGBT 1200V 97A 480W SOT227

38.32

IXYS IXYN80N90C3H1

IGBT 900V 115A 500W C3 SOT-227

33.3

Microsemi Corporation APT75GT120JU2

IGBT 1200V 100A 416W SOT227

30.75

Infineon Technologies FF600R12IE4BOSA1

IGBT MODULE 1200V 600A

396.14