IGBT Modules

Insulated-gate bipolar transistors (IGBTs) are three-terminal power semiconductor devices primarily used as electronic switches that combine high efficiency and fast switching. As modules, IGBTs are configured as asymmetrical bridges, boost, buck and brake choppers, full-bridge, three-level and three-phase inverters. Some have built-in NTC thermistors for temperature monitoring. IGBT modules are differentiated by max power, collector current, collector-emitter breakdown voltage and configuration.

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Infineon Technologies FF450R33T3E3B5BPSA1

IHV, IHM T, XHP 3,3-6,5K

1126.94

Infineon Technologies FF450R33T3E3BPSA1

IHV IHM T XHP 3 3-6 5K

1002.18

Infineon Technologies IFF600B12ME4PB11BPSA1

ECONO DUAL 3 W/SHUNTS

250.37

Infineon Technologies FF600R12ME4EB11BOSA1

MOD IGBT MED PWR ECONOD-5

242.96

Infineon Technologies FF500R17KE4BOSA1

MOD IGBT MED PWR 62MM-1

236.86

Infineon Technologies FF400R17KE4EHOSA1

MOD IGBT MED PWR 62MM-1

227.74

Infineon Technologies FF400R17KE4HOSA1

MOD IGBT MED PWR 62MM-1

221.69

Infineon Technologies FF450R12ME4EB11BPSA1

MOD IGBT MED PWR ECONOD-4

209.93