IGBT Modules

Insulated-gate bipolar transistors (IGBTs) are three-terminal power semiconductor devices primarily used as electronic switches that combine high efficiency and fast switching. As modules, IGBTs are configured as asymmetrical bridges, boost, buck and brake choppers, full-bridge, three-level and three-phase inverters. Some have built-in NTC thermistors for temperature monitoring. IGBT modules are differentiated by max power, collector current, collector-emitter breakdown voltage and configuration.


Infineon Technologies FS150R12KE3BOSA1

IGBT MODULE 1200V 150A

187.46

Infineon Technologies FS75R12KT4B15BOSA1

IGBT MODULE 1200V 75A

104.61

Vishay / Semiconductor - Diodes Division VS-40MT120UHAPBF

IGBT 1200V 80A 463W MTP

103.76

Infineon Technologies FP50R12KT4B11BOSA1

IGBT MODULE 1200V 50A

101.69

Infineon Technologies FF200R06KE3HOSA1

IGBT MODULE 600V 200A

87.89

Vishay / Semiconductor - Diodes Division VS-GB90DA120U

IGBT 1200V 149A 862W SOT-227

87.59

Infineon Technologies DDB6U134N16RRBOSA1

IGBT MODULE 1600V 134A

78.29

Microsemi Corporation APT150GN120JDQ4

IGBT 1200V 215A 625W SOT227

54.22