IGBT Modules

Insulated-gate bipolar transistors (IGBTs) are three-terminal power semiconductor devices primarily used as electronic switches that combine high efficiency and fast switching. As modules, IGBTs are configured as asymmetrical bridges, boost, buck and brake choppers, full-bridge, three-level and three-phase inverters. Some have built-in NTC thermistors for temperature monitoring. IGBT modules are differentiated by max power, collector current, collector-emitter breakdown voltage and configuration.

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Microsemi Corporation APTGF25H120T2G

MOD IGBT NPT 1200V 40V SP2

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Microsemi Corporation APTGF150A60T3AG

MOD IGBT NPT 600V 230A SP3

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Microsemi Corporation APTGF100A120T3AG

MOD IGBT NPT 1200V 130A SP3

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Microsemi Corporation APTCV60HM70RT3G

POWER MOD FULL BRIDGE SP3

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Microsemi Corporation APTCV60HM70BT3G

POWER MOD IGBT3 FULL BRIDGE SP3

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Vishay / Semiconductor - Diodes Division VS-CPV363M4KPBF

MOD IGBT 3PHASE INV 600V SIP

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Microsemi Corporation APT70GR120J

IGBT 1200V 112A 543W SOT227

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Microsemi Corporation APT50GR120JD30

IGBT 1200V 84A 417W SOT227

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