IGBT Modules

Insulated-gate bipolar transistors (IGBTs) are three-terminal power semiconductor devices primarily used as electronic switches that combine high efficiency and fast switching. As modules, IGBTs are configured as asymmetrical bridges, boost, buck and brake choppers, full-bridge, three-level and three-phase inverters. Some have built-in NTC thermistors for temperature monitoring. IGBT modules are differentiated by max power, collector current, collector-emitter breakdown voltage and configuration.

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Microsemi Corporation APTGT50DA170T1G

IGBT 1700V 75A 312W SP1

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Microsemi Corporation APTGT50DA170D1G

IGBT 1700V 70A 310W D1

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Microsemi Corporation APTGT450DU60G

IGBT MOD TRENCH DUAL SOURCE SP6

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Microsemi Corporation APTGT400SK60D3G

IGBT 600V 500A 1250W D3

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Microsemi Corporation APTGT50DH60TG

IGBT MOD TRENCH ASYM BRIDGE SP4

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Microsemi Corporation APTGT400SK120D3G

IGBT 1200V 580A 2100W D3

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Microsemi Corporation APTGT400DA120D3G

IGBT 1200V 580A 2100W D3

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Microsemi Corporation APTGT35SK120D1G

IGBT 1200V 55A 205W D1

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