Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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IXYS IXGX72N60A3H1

IGBT 600V 75A 540W PLUS247

10.88

IXYS IXA20RG1200DHG-TUB

IGBT 1200V 32A 125W SMPD

12.36

IXYS IXGK50N60BU1

IGBT 600V 75A 300W TO264AA

12.33

IXYS IXGR6N170A

IGBT 1700V 5.5A 50W ISOPLUS247

13.35

IXYS IXYK200N65B3

IGBT

13.27

IXYS IXGX35N120B

IGBT 1200V 70A 350W PLUS247

13.21

IXYS IXGH4N250C

IGBT 2500V 13A 150W TO247

15.15

IXYS IXBT2N250

IGBT 2500V 5A 32W TO268

14.96