Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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IXYS IXGA7N60CD1

IGBT 600V 14A 75W TO263

0

IXYS IXGC16N60C2

IGBT 600V 20A 63W ISOPLUS220

0

IXYS IXGK60N60B2D1

IGBT 600V 75A 500W TO264

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IXYS IXGK60N60

IGBT 600V 75A 300W TO264

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IXYS IXGK28N140B3H1

IGBT 1400V 60A 300W TO264

0

IXYS IXGR50N60B2D1

IGBT 600V 68A 200W ISOPLUS247

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IXYS IXGR50N60B2

IGBT 600V 68A 200W ISOPLUS247

0

IXYS IXGR40N60CD1

IGBT 600V 75A 200W ISOPLUS247

0