Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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ON Semiconductor SGH15N60RUFDTU

IGBT 600V 24A 160W TO3P

0

ON Semiconductor ISL9V3036D3S

IGBT 360V 21A 150W TO252AA

0

ON Semiconductor HGT1S14N36G3VLT

IGBT 390V 18A 100W TO262AA

0

ON Semiconductor SGL40N150TU

IGBT 1500V 40A 200W TO264

0

ON Semiconductor FGL60N100DTU

IGBT 1000V 60A 176W TO264

0

ON Semiconductor FGA25N120ANTU

IGBT 1200V 40A 310W TO3P

0

ON Semiconductor FGA50N60LS

IGBT 600V 100A 240W TO3P

0

ON Semiconductor NGB8204NT4G

IGBT 430V 18A 115W D2PAK

0