Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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STMicroelectronics STGF10NC60HD

IGBT 600V 9A 24W TO220FP

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Infineon Technologies IRG4BC20UDSTRRP

IGBT 600V 13A 60W D2PAK

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Infineon Technologies IRG4BC30W-STRRP

IGBT 600V 23A 100W D2PAK

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Infineon Technologies IRG4BC30K-STRRP

IGBT 600V 28A 100W D2PAK

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ON Semiconductor FGA25N120FTD

IGBT 1200V 50A 313W TO3P

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Infineon Technologies IRGSL10B60KDPBF

IGBT 600V 22A 156W TO220-3

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Infineon Technologies IRGP30B120KDPBF

IGBT 1200V 60A 300W TO247AC

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ON Semiconductor FGA70N33BTDTU

IGBT 330V 149W TO3P

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