Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

---

IXYS IXGH30N60BU1

IGBT 600V 60A 200W TO247AD

0

IXYS IXGH30N60B

IGBT 600V 60A 200W TO247AD

0

IXYS IXGP50N33TBM-A

IGBT 330V 30A 50W TO220AB

0

IXYS IXGP24N60C

IGBT 600V 48A 150W TO220AB

0

IXYS IXGP20N60B

IGBT 600V 40A 150W TO220AB

0

IXYS IXGT24N170AH1

IGBT 1700V 24A 250W TO268

0

IXYS IXGT20N60BD1

IGBT 600V 40A 150W TO268

0

IXYS IXGT20N60B

IGBT 600V 40A 150W TO268

0