Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

---

ON Semiconductor FGL12040WD

1200V 40A FS2 TRENCH IGBT

8.21

Infineon Technologies AUIRGF66524D0

IGBT 600V 60A 214W TO-247AC

8.17

ON Semiconductor HGTG40N60B3

IGBT 600V 70A 290W TO247

8.16

ON Semiconductor FGH75T65SHDTLN4

FS3 T TO247 75A 650V 4WL

7.9

ON Semiconductor FGH75T65SQDNL4

650V/75 FAST IGBT FSIII T

7.9

Infineon Technologies AIKW50N65DF5XKSA1

IC DISCRETE 650V TO247-3

7.64

Infineon Technologies AIKW50N65DH5XKSA1

IC DISCRETE 650V TO247-3

7.64

Infineon Technologies IKFW60N60DH3EXKSA1

IGBT 600V 50A TO247-3

7.41