Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Infineon Technologies IKFW50N60DH3XKSA1

IGBT 600V 40A TO247-3

7.15

ON Semiconductor FGH75T65SQDTL4

650V FS4 TRENCH IGBT

6.89

Infineon Technologies AUIRGS4062D1

IGBT 600V 59A 246W D2PAK

6.87

Infineon Technologies AUIRGSL4062D1

IGBT 600V 59A 246W TO-262

6.87

ON Semiconductor HGTG27N120BN

IGBT 1200V 72A 500W TO247

6.84

Infineon Technologies IKFW40N60DH3EXKSA1

IGBT 600V 30A TO247-3

6.82

ON Semiconductor FGH60N60SFTU

IGBT 600V 120A 378W TO247

6.82

ON Semiconductor FGH12040WD-F155

1200V 40A FS2 TRENCH IGBT

6.82