Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

---

Infineon Technologies AIKW40N65DH5XKSA1

IC DISCRETE 650V TO247-3

6.76

Infineon Technologies AIKW40N65DF5XKSA1

IC DISCRETE 650V TO247-3

6.76

ON Semiconductor FGH60N60SMD-F085

IGBT 600V 120A 600W TO247

6.76

Infineon Technologies AUIRGB4062D1

IGBT 600V 59A 246W TO-220AB

6.73

ON Semiconductor FGH40N120ANTU

IGBT 1200V 64A 417W TO247

6.62

ON Semiconductor FGH60N60SFDTU-F085

IGBT 600V 60A 378W TO247

6.67

ON Semiconductor FGH60N60UFDTU-F085

IGBT 600V 120A 298W TO247

6.54

Infineon Technologies IKZ50N65ES5XKSA1

IGBT TRENCH 650V 80A TO247-4

6.51