Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Infineon Technologies SKB06N60HSATMA1

IGBT 600V 12A 68W TO263-3

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Infineon Technologies IRG7PH35UPBF

IGBT 1200V 55A 210W TO247AC

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Infineon Technologies IRG7PH35UD1PBF

IGBT 1200V 50A 179W TO247

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Infineon Technologies IRG7PH30K10PBF

IGBT 1200V 33A 210W TO247AC

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Infineon Technologies IRG6S320UPBF

IGBT 330V 50A 114W D2PAK

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Infineon Technologies IRG4PC50SDPBF

IGBT 600V 70A 200W TO247AC

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Infineon Technologies IRG4PC50F-EPBF

IGBT 600V 70A 200W TO247AD

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Infineon Technologies IRGS15B60KDTRRP

IGBT 600V 31A 208W D2PAK

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