Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Infineon Technologies IHW20T120FKSA1

IGBT 1200V 40A 178W TO247-3

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Infineon Technologies SGB30N60ATMA1

IGBT 600V 41A 250W TO263-3

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Infineon Technologies SGB20N60ATMA1

IGBT 600V 40A 179W TO263-3

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Infineon Technologies SGB15N60HSATMA1

IGBT 600V 27A 138W TO263-3

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Infineon Technologies SGB15N60ATMA1

IGBT 600V 31A 139W TO263-3

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Infineon Technologies SKB15N60 E8151

IGBT 600V 31A 139W TO263-3

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Infineon Technologies SKB15N60ATMA1

IGBT 600V 31A 139W TO263-3

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Infineon Technologies SKB10N60AATMA1

IGBT 600V 20A 92W TO263-3

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