Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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IXYS IXSP24N60B

IGBT 600V 48A 150W TO220AB

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IXYS IXSK50N60BU1

IGBT 600V 75A 300W TO264

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IXYS IXSK50N60BD1

IGBT 600V 75A 300W TO264

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STMicroelectronics STGB35N35LZT4

IGBT 345V 40A 176W D2PAK

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IXYS IXBT32N300

IGBT 3000V 80A 400W TO268

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STMicroelectronics STGW35HF60WD

IGBT 600V 60A 200W TO-247

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Infineon Technologies IHW30N100TFKSA1

IGBT 1000V 60A 412W TO247-3

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Infineon Technologies IHW30N100R

IGBT 1000V 60A 412W TO247-3

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