Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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IXYS IXXH80N65B4H1

IGBT 650V 160A 625W TO247AD

8.75

IXYS IXYH100N65C3

IGBT 650V 200A 830W TO247

8.45

ON Semiconductor FGH40T120SMD-F155

IGBT 1200V 80A 555W TO247-3

8.43

Microsemi Corporation APT25GR120BD15

IGBT 1200V 75A 521W TO247

8.39

Infineon Technologies IGW60T120FKSA1

IGBT 1200V 100A 375W TO247-3

8.39

Infineon Technologies IRGP4069DPBF

IGBT 600V 76A 268W TO247AC

8.18

Microsemi Corporation APT27GA90BD15

IGBT 900V 48A 223W TO247

7.7

ON Semiconductor NGTB40N120FL3WG

IGBT 1200V 160A TO247

7.57