Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.


Infineon Technologies IGZ100N65H5XKSA1

IGBT 650V 100A SGL TO-247-4

7.3

Infineon Technologies IKW75N65ES5XKSA1

IGBT TRENCH 650V 80A TO247-3

7.17

Infineon Technologies IKW25T120FKSA1

IGBT 1200V 50A 190W TO247-3

7.04

Infineon Technologies IKZ50N65EH5XKSA1

IGBT 650V 50A CO-PACK TO-247-4

6.98

Infineon Technologies IRG4PF50WPBF

IGBT 900V 51A 200W TO247AC

6.79

Infineon Technologies IRG4PH40KDPBF

IGBT 1200V 30A 160W TO247AC

6.68

Infineon Technologies IRGP35B60PDPBF

IGBT 600V 60A 308W TO247AC

6.67

Infineon Technologies IRG4PC50FPBF

IGBT 600V 70A 200W TO247AC

6.43