Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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STMicroelectronics STGW30NC60KD

IGBT 600V 60A 200W TO247

6.43

Infineon Technologies IRG4PC40KDPBF

IGBT 600V 42A 160W TO247AC

6.25

ON Semiconductor FGY75N60SMD

IGBT 600V 150A 750W POWER-247

6.17

Infineon Technologies IKW50N60H3FKSA1

IGBT 600V 100A 333W TO247-3

6.12

Infineon Technologies IKW50N65ES5XKSA1

IGBT TRENCH 650V 80A TO247-3

5.92

Infineon Technologies IGW25T120FKSA1

IGBT 1200V 50A 190W TO247-3

5.87

Infineon Technologies IKW50N65EH5XKSA1

IGBT TRENCH 650V 80A TO247-3

5.86

STMicroelectronics STGW35NB60SD

IGBT 600V 70A 200W TO247

5.84