Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Infineon Technologies IKW30N60H3FKSA1

IGBT 600V 60A 187W TO247-3

4.51

STMicroelectronics STGW40NC60KD

IGBT 600V 70A 250W TO247

4.44

Infineon Technologies IHW40N65R5XKSA1

IGBT 650V 80A 230W TO247

4.31

STMicroelectronics STGW39NC60VD

IGBT 600V 80A 250W TO247

4.31

Infineon Technologies IGW15T120FKSA1

IGBT 1200V 30A 110W TO247-3

4.23

Infineon Technologies IHW25N120E1XKSA1

IGBT NPT/TRENCH 1200V 50A TO247

4.19

Infineon Technologies IKW30N60DTPXKSA1

IGBT 600V 53A TO247-3

4.18

STMicroelectronics STGW20NC60VD

IGBT 600V 60A 200W TO247

4.06